By Dieter Bäuerle
Laser Processing and Chemistry provides an summary of the basics and functions of laser-matter interactions, specifically in regards to laser fabric processing. particular recognition is given to laser-induced actual and chemical procedures at gas-solid, liquid-solid, and solid-solid interfaces. beginning with the historical past physics, the ebook proceeds to ascertain functions of laser recommendations in micro-machining, and the patterning, coating, and amendment of fabric surfaces. This fourth variation has been revised and enlarged to hide new themes corresponding to 3D microfabrication, advances in nanotechnology, ultrafast laser know-how and laser chemical processing (LCP).
Graduate scholars, physicists, chemists, engineers, and brands alike will locate this ebook a useful reference paintings on laser processing.
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Additional resources for Chemical Processing with Lasers
1). At very high molecular transport by convection may become The reacti on rates achi eved in gas-phase LCP are often we 11 transport-limited rates discussed above. This is bel ow the especially true in photolytic processing when the laser light is absorbed within the gas phase. 5 and 8). Gas-phase nucleation or recombination, however, can only be controlled by reducing the atomic or molecular density. Somet i mes the same effect can be achi eved by inert-gas bufferi ng. In any case, this results in a lowering of deposition or etch rates.
Energy levels are not For included. According to the Franck-Condon principle, transitions always occur vertically between maxima in 1'1'112 and 1'1'2,2, where the 'I'i are the corresponding vibrational wave functions in the lower and upper electronic states. 15a-d. Potential energy curves for the electronic ground state and excited states showing different cases of dissociation. Here, ED is the energy of dissociation and hv the photon energy. 15a the excited electronic state is unstable and the molecule, after having been brought into the unstable excited state, typically dissociates within 10- 13 - 10- 14 s.
8). Similar1y, photochemica1 etching is also often performed with halogen compounds such as COF 2 , CF2C12, CF2Br2, CF3Br, CF31, CF3NO. CO(CF3)2. 48,52,57 ,89,90-92J. 90-92J. 93J. Admixtures of metal halides and hydrogen are used for meta1 deposition. The most important precursor mo1ecu1e so far is WF6. This mo1ecu1e is most common1y used for photodeposition of extended thin fi lms of W, main1y by means of ArF excimer laser radiation. 1). Hydrides such as SiH 4 , Si2H6, GeH4, CH4, C2H2 are used for deposition of Si, Ge and C.