By Domine Leenaerts, J. van der Tang, Cicero S. Vaucher
Circuit layout for RF Transceivers covers key development blocks that are had to make an built-in transceiver for instant and mobile purposes, that's low-noise amplifiers, mixers, voltage managed oscillators, RF strength amplifiers and phase-locked loop structures. ranging from unique RF thoughts and standards, the authors talk about the circuits intimately and supply recommendations to many layout difficulties. The circuits are carried out in a variety of smooth expertise methods. construction necessities are taken under consideration, and size effects are awarded and mentioned. numerous of the offered circuits are utilized in IC items. The textual content additionally contains a number of RF applied sciences (for instance double-poly, Silicon-on-Anything, SiGe-bipolar, RF-CMOS, etc.) and microwave layout recommendations, akin to transmission line options. furthermore, the matter of connecting the RF indications on-chip to the PCB and to the antenna could be mentioned, together with the impact of the package deal, ESD and bond pads. The contents of Circuit layout for RF Transceivers 2d edition are according to examine actions performed at Philips learn. Many inner and exterior courses contributed to make the awarded fabric cutting-edge. The publication is written for those that have a simple wisdom of analogue IC layout. the second one version of this winning 2001 RF Circuit layout publication has been up-to-date, newest know-how experiences were further in addition to a number of real case stories. as a result of authors being energetic in in addition to academia, this could end up to be a necessary consultant on RF Transceiver layout for college kids and engineers.
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Additional info for Circuit Design for RF Transceivers
And then the two-port relations may be written as The five gain definitions can all be formulated in terms of s-parameters and the reflection coefficient defined as where is the characteristic impedance. 16) expresses the quality of matching and 20 log is defined as the “return loss”3. In fact, it means that the load is reflecting back some of the power delivered by the source. You can also view it as that the load not taking up all of the available power from the source. As an example, assume where S is a system.
The resulting model is accurate for RF analysis, although it only partly includes the non-quasi static effects. If a complete non-quasi static behavior has to be included, the low-frequency MOST should be divided into a chain of smaller MOSTs in a very particular way . Cut-off Frequency Probably the most used FOM for a bipolar device is the cut-off frequency sometimes called the transition frequency or unity-current-gain frequency. The latter name refers to the definition of the cut-off frequency: the is defined as the transition frequency at which the common-emitter small signal gain drops to unity for a short-circuit load.
This structure is used most in digital circuitry. The second option is a parallel structure. To reduce the gate resistance, the devices can be laid out as n devices in parallel with each device with a width of W / n. 22. The basic layout is the same as that for the single device. The gate has contacts 32 CIRCUIT DESIGN FOR RF TRANSCEIVERS at both sides. This device has appreciably lower gate resistance than the single device because of the reduced width. The parallel gate capacitance is increased, however, and the drain junction capacitance is not optimal.