Computer-Aided Design and VLSI Device Development by Kit Man Cham, Soo-Young Oh, John L. Moll

By Kit Man Cham, Soo-Young Oh, John L. Moll

This e-book is worried with using Computer-Aided layout (CAD) within the equipment and technique improvement of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) expertise. cutting-edge machine and technique improvement are awarded. This publication is meant as a reference for engineers concerned about VLSI improve­ ment who've to resolve many machine and procedure difficulties. CAD experts also will locate this publication worthwhile because it discusses the association of the simula­ tion procedure, and in addition offers many case reports the place the consumer applies the CAD instruments in numerous occasions. This e-book can be meant as a textual content or reference for graduate scholars within the box of built-in circuit fabrication. significant components of equipment physics and processing are defined and illustrated with Simulations. the cloth during this ebook is because of the a number of years of labor at the implemen­ tation of the simulation approach, the refinement of actual types within the simulation courses, and the applying of the courses to many instances of gadget advancements. The textual content begun as courses in journals and con­ ference court cases, as weil as lecture notes for a Hewlett-Packard inner CAD direction. This publication contains components. It starts off with an summary of the prestige of CAD in VLSI, which pointsout why CAD is vital in VLSI improvement. half A provides the association of the two-dimensional simulation system.

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10, 8 Aug 1974, pp. 341-343. 6] P. E. Cottrell and E. M. Buturla, " Steady-state Analysis of Field Effect Transistors via the Finite Element Method," I EDM Tech. Digest, Dec 1975, pp. 51-54. 7] T. Toyabe, K. Yamaguchi, S. Asai, and M. S. Mock, "A Numerical Model of Avalanche Breakdown in MOSFETs," IEEE Trans. on Electron Devices, ED-25, July 1978, pp. 825-831. 8] J. A. Greenfield, S. E. Hansen, and R. W. Dutton, "Two-Dimensional Analysis for Device Modeling," TR No. , 1980. 9] S. Selberherr, W.

12] B. E. Deal and A. S. Grove, J. Appl. , 36, 1965, p. 13] D. A. Antoniadis, S. E. Hansen, and R. W. Dutton, "SUPREM II- A Program for IC Process Modefing and Simulation," TR No. , 1978. 14] H. G. Lee, "Two-Dimensional Impurity Diffusion Studies: Process Modelsand Test Structures for Low-Concentration Boron Diffusion," TR No. , Aug 1980. 15] D. Chin, M. Kump, and R. W. , Oct 1979. 16] E. Khalily, "Transistor Electrical Characterization and Analysis Program," Hewlett-Packard Journal, Vol. 32, No.

20 --------*------------------------------------------------------! * * * * * * ! ! I ! ! I I ! ! I ! Fig. 7 SUPREM output of boron distribution ! Computer-Aided Design 38 *** STANFORD UNIVERSITY PROCESS ENGINEERING MODELS PROGRAM *** *** VERSION 0-05 *** 1.... 2.... 3.... 4.... 5.... 6.... 7.... 8.... 9.... 10.... 11.... 12.... 13.... 14.... 15.... 16.... 17.... 18.... 19.... 20.... 21.... 22.... 23.... 24.... 25.... 26.... 27.... 28.... 29.... 30.... 5 COMMENT LPCVD DEPOSITION STEP TYPE=OXID,TEMP=905,TIME=60 SAVE FILE=DL026,TYPE=B END Fig.

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