Copper Zinc Tin Sulfide-Based Thin Film Solar Cells by Kentaro Ito

By Kentaro Ito

Beginning with an outline and ancient historical past of Copper Zinc Tin Sulphide (CZTS) expertise, next chapters conceal houses of CZTS skinny motion pictures, varied instruction tools of CZTS skinny movies, a comparative learn of CZTS and CIGS sunlight mobilephone, computational procedure, and destiny purposes of CZTS skinny movie sun modules to either ground-mount and rooftop install.

The semiconducting compound (CZTS) is made up earth-abundant, inexpensive and non-toxic parts, which make it an awesome candidate to exchange Cu(In,Ga)Se2 (CIGS) and CdTe sunlight cells which face fabric shortage and toxicity matters. The equipment functionality of CZTS-based skinny movie sun cells has been gradually enhancing over the last two decades, they usually have now reached close to advertisement potency degrees (10%). those achievements end up that CZTS-based sunlight cells have the aptitude for use for large-scale deployment of photovoltaics.
With contributions from major researchers from academia and undefined, a lot of those authors have contributed to the development of its potency, and feature wealthy adventure in getting ready a number of semiconducting skinny movies for sunlight cells.

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Additional info for Copper Zinc Tin Sulfide-Based Thin Film Solar Cells

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12 Elemental depth profiles determined by EDX mapping analysis of a cross-section of a coveaporated CZTS solar cell. For the EDX measurement an acceleration voltage of 7 kV was used. 1 Process flow diagram illustrating the nanocrystal-ink-based approach for the formation of CZTSSe solar cells: nanocrystal synthesis and ink formation; nanocrystal film coating and annealing; selenization of nanocrystals for dense absorber formation; and CdS/ZnO/ITO/Grid/MgF2 deposition. ITO/ZnO/CdS layers are digitally enhanced for clarification.

8 eV. The dashed line indicates the underlying density of transitions for sample 3. The small arrows at the top indicate estimates of the optical gaps for these samples based on these TPC spectra. (b) Comparison of the TPC spectra for the two higher-band-gap samples along with a replot of the sample 2 TPC spectra for comparison. For these higher-band-gap samples the band tail is much broader. The energy distribution of the deeper band of transitions is less clear. Note that the scales in (a) and (b) are slightly different.

C) Reported short-circuit current density Jsc as a function of Eg for various CZTSSe devices compared to the SQL with and without optical losses. Stars depict devices with an anti-reflective coating (ARC), dots represent devices without ARC. (d) Open-circuit voltage losses as a function of band gap. 2% CZTSe device with (b) the corresponding EQE and (c) the evolution of the open-circuit voltage Voc with temperature T. (d) J–V curve, (e) EQE and (f) Voc v. 3% CZTSSe device. 3: (a, b) CZTSe device; (d, e) CZTSSe device; (c, f) J–V curve at 224 K plotted on a logarithmic scale after correction of RS (series resistance) and GSh (shunt conductance) for the (c) Se device and (f) SSe device.

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