By Kentaro Ito
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Additional info for Copper Zinc Tin Sulfide-Based Thin Film Solar Cells
12 Elemental depth profiles determined by EDX mapping analysis of a cross-section of a coveaporated CZTS solar cell. For the EDX measurement an acceleration voltage of 7 kV was used. 1 Process flow diagram illustrating the nanocrystal-ink-based approach for the formation of CZTSSe solar cells: nanocrystal synthesis and ink formation; nanocrystal film coating and annealing; selenization of nanocrystals for dense absorber formation; and CdS/ZnO/ITO/Grid/MgF2 deposition. ITO/ZnO/CdS layers are digitally enhanced for clarification.
8 eV. The dashed line indicates the underlying density of transitions for sample 3. The small arrows at the top indicate estimates of the optical gaps for these samples based on these TPC spectra. (b) Comparison of the TPC spectra for the two higher-band-gap samples along with a replot of the sample 2 TPC spectra for comparison. For these higher-band-gap samples the band tail is much broader. The energy distribution of the deeper band of transitions is less clear. Note that the scales in (a) and (b) are slightly different.
C) Reported short-circuit current density Jsc as a function of Eg for various CZTSSe devices compared to the SQL with and without optical losses. Stars depict devices with an anti-reflective coating (ARC), dots represent devices without ARC. (d) Open-circuit voltage losses as a function of band gap. 2% CZTSe device with (b) the corresponding EQE and (c) the evolution of the open-circuit voltage Voc with temperature T. (d) J–V curve, (e) EQE and (f) Voc v. 3% CZTSSe device. 3: (a, b) CZTSe device; (d, e) CZTSSe device; (c, f) J–V curve at 224 K plotted on a logarithmic scale after correction of RS (series resistance) and GSh (shunt conductance) for the (c) Se device and (f) SSe device.